Nonvolatile memory device and method of forming the same
US7700426B2 · kind B2 · utility
5Cited by
7References
13Claims
0Family size
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Key dates
| Filing date | Jan 29, 2007 |
| Grant date | Apr 20, 2010 |
| Priority date | — |
| Expiry date | Jun 15, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
Provided is a nonvolatile memory device and a method of forming the nonvolatile memory device. The nonvolatile memory device includes a floating gate formed on a first active region doped with a first-conductivity-type dopant. The floating gate is doped with the first-conductivity-type dopant. Therefore, the thickness of a tunnel insulation layer can be kept thin, and the threshold voltage of a nonvolatile memory cell including the floating gate can be increased. As a result, the endurance of the tunnel insulation layer and the data retention characteristics of the nonvolatile memory cell is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.