Patent · US Active

Recycling of ion implantation monitor wafers

US7700488B2 · kind B2 · utility

1Cited by
7References
37Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 16, 2007
Grant dateApr 20, 2010
Priority date
Expiry dateJun 17, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/02013
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A wafer processing method. The method includes providing a semiconductor wafer. The semiconductor wafer includes (i) a semiconductor layer and (ii) a dopant layer on top of the semiconductor layer. The dopant layer comprises dopants. The method further includes removing the dopant layer from the semiconductor wafer. No chemical etching is performed on the dopant layer before said removing the dopant layer is performed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.