Recycling of ion implantation monitor wafers
US7700488B2 · kind B2 · utility
1Cited by
7References
37Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2007 |
| Grant date | Apr 20, 2010 |
| Priority date | — |
| Expiry date | Jun 17, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02013
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A wafer processing method. The method includes providing a semiconductor wafer. The semiconductor wafer includes (i) a semiconductor layer and (ii) a dopant layer on top of the semiconductor layer. The dopant layer comprises dopants. The method further includes removing the dopant layer from the semiconductor wafer. No chemical etching is performed on the dopant layer before said removing the dopant layer is performed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.