Semiconductor device

US7700972B2 · kind B2 · utility

Assignee

• Mitsubishi Electric Corporation · JP

Inventors

• Hideo Takeuchi · Shiroi, JP
• Yoshitsugu Yamamoto · Tokyo, JP

Key dates

• Filing date: Jun 20, 2008
• Grant date: Apr 20, 2010
• Expiry date: Aug 1, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/471

Abstract

A semiconductor device comprises an AlN layer, a GaN layer, and an AlGaN layer sequentially formed on a semiconductor substrate. A first opening extends through said GaN layer and said AlGaN layer and exposes part of an upper surface of the AlN layer. A second opening extends through the semiconductor substrate and exposes a part of a lower surface of the AlN layer, in a location facing the first opening. A upper electrode is exposed on an upper surface of the AlN layer in the first opening; and a lower electrode is disposed on a lower surface of the AlN layer in the second opening.