Short channel trench power MOSFET with low threshold voltage
US7701001B2 · kind B2 · utility
6Cited by
9References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 1, 2003 |
| Grant date | Apr 20, 2010 |
| Priority date | — |
| Expiry date | Jan 21, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
Abstract
A short channel trench MOSFET which has a lower peak concentration of dopants and a substantially uniform concentration of dopants compared to a conventional short channel device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.