Semiconductor device having device characteristics improved by straining surface of active region and its manufacture method
US7701016B2 · kind B2 · utility
6Cited by
5References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 3, 2006 |
| Grant date | Apr 20, 2010 |
| Priority date | — |
| Expiry date | Sep 19, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/795
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A trench is formed in the surface layer of a semiconductor substrate, surrounding an active region. A lower insulating film made of insulating material fills a lower region of the trench. An upper insulating film fills a region of the trench above the lower insulating film. The upper insulating film has therein a stress generating tensile strain in a surface layer of the active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.