Inventor · Kyoto, JP

Ryo Tanabe

16Patents
4h-index
21Co-inventors
56Inventor score

Filing activity: Jul 28, 2005 → May 7, 2019

Most-cited inventions

PatentTitleAreaCited byStatus
US8773918B2 Semiconductor memory device and method of writing into semiconductor memory device Physics 13 Active
US7741185B2 Method of manufacturing semiconductor device Electricity 9 Active
US7701016B2 Semiconductor device having device characteristics improved by straining surface of active region and its manufacture method Electricity 6 Active
US7951686B2 Method of manufacturing semiconductor device having device characteristics improved by straining surface of active region Electricity 4 Active
US8461652B2 Semiconductor device having an n-channel MOS transistor, a p-channel MOS transistor and a contracting film Electricity 3 Active
US7442995B2 Semiconductor device and method of manufacturing the same Electricity 3 Expired
US10637018B2 Battery module, electricity storage device, electricity storage system, electronic device, electric-powered vehicle, and power system Emerging Cross-Sectional Technologies 1 Active
US10355329B2 Battery unit, battery module, power storage system, electronic device, power system, and electric vehicle Emerging Cross-Sectional Technologies 1 Active
US9005801B2 Battery module, electronic apparatus, electric power storage system, electric power system, and electric vehicle Emerging Cross-Sectional Technologies 1 Active
US11815433B2 Adsorption apparatus and chemiluminescence type nitrogen oxide concentration meter Emerging Cross-Sectional Technologies 0 Active
US10862083B2 Battery unit, battery module, power storage system, electronic device, electric power system, and electric vehicle Emerging Cross-Sectional Technologies 0 Active
US10164222B2 Battery module Emerging Cross-Sectional Technologies 0 Active
US11183727B2 Power supply apparatus Emerging Cross-Sectional Technologies 0 Active
US9419256B2 Battery unit with peripheral bracket and internal support body Emerging Cross-Sectional Technologies 0 Active
US11162926B2 Chemiluminescence type nitrogen oxide concentration meter Emerging Cross-Sectional Technologies 0 Active
US8697513B2 Manufacturing method of semiconductor device having N-channel MOS transistor, P-channel MOS transistor and expanding or contracting film Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.