Semiconductor device manufacturing system and method for manufacturing semiconductor devices including calculating oxide film thickness using real time simulator
US7702413B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 8, 2004 |
| Grant date | Apr 20, 2010 |
| Priority date | — |
| Expiry date | Jun 14, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P90/02
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
The present invention provides a solution for interleaving data frames, in a semiconductor device manufacturing system in which the processing apparatus for conducting a process on any one of a semiconductor substrate and a thin film on a surface thereof; a self-diagnostic system for diagnosing a state of the processing apparatus; and a parameter fitting apparatus for maintaining a parameter of the self-diagnostic system when an inspection result of the semiconductor substrate having undergone the process has been determined to be correct, and for changing the parameter of the self-diagnostic system when the inspection result has been determined to be incorrect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.