Method for producing a semiconductor wafer with profiled edge

US7704126B2 · kind B2 · utility

Assignee

• Siltronic AG · DE

Inventors

• Joachim Mattes · Burghausen, DE
• Anton Huber · Burghausen, DE
• Joerg Moser · Unterneukirchen, DE

Key dates

• Filing date: May 4, 2007
• Grant date: Apr 27, 2010
• Expiry date: May 4, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02021
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Semiconductor wafers with profiled edges, are produced with decreased losses due to edge or other damage by separating a semiconductor wafer from a crystal; profiling the edge in a profile producing step wherein the edge is mechanically machined to a profile that is true to scale with respect to a predefined target profile; mechanically machining the wafer to reduce the a thickness of the semiconductor wafer; and machining the edge profile to acquire the target profile.