Light emitting diode by use of metal diffusion bonding technology and method of producing light emitting diode
US7704770B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2006 |
| Grant date | Apr 27, 2010 |
| Priority date | — |
| Expiry date | May 16, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
Abstract
The main objective of present invention is to provide a manufacturing method of light emitting diode that utilizes metal diffusion bonding technology. AlInGaP light emitting diode epitaxial structure on a temporary substrate is bonded to a permanent substrate having a thermal expansion coefficient similar to that of the epitaxial structure, and then the temporary substrate is removed to produce an LED having a vertical structure and better performance. The other objective of the present invention is to provide a high performance LED that uses metal diffusion technology and wet chemical etching technology to roughen the LED surface in order to improve light extraction efficiency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.