Optical enhancement of integrated circuit photodetectors

US7704780B2 · kind B2 · utility

Assignee

• Aptina Imaging Corporation · KY

Inventors

• Chintamani Palsule · Lake Oswego, US
• John Stanback · Fort Collins, US
• Thomas Dungan · Fort Collins, US
• Mark D. Crook · Windsor, US

Key dates

• Filing date: Nov 18, 2008
• Grant date: Apr 27, 2010
• Expiry date: Nov 18, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/8067

Abstract

A semiconductor integrated circuit structure and method for fabricating. The semiconductor integrated circuit structure includes a light sensitive device integral with a semiconductor substrate, a cover dielectric layer disposed over the light sensitive device, and a lens-formation dielectric layer disposed over the cover dielectric layer. Light is transmittable though the cover dielectric layer, and through the lens-formation dielectric layer. The lens-formation dielectric layer forms an embedded convex microlens. The microlens directs light onto the light sensitive device.