Methods of fabricating multi-bit phase-change memory devices and devices formed thereby
US7704788B2 · kind B2 · utility
64Cited by
7References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 4, 2008 |
| Grant date | Apr 27, 2010 |
| Priority date | — |
| Expiry date | May 17, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/5678
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods of forming integrated circuit devices include forming at least one non-volatile memory cell on a substrate. The memory cell includes a plurality of phase-changeable material regions therein that are electrically coupled in series. This plurality of phase-changeable material regions are collectively configured to support at least 2-bits of data when serially programmed using at least four serial program currents. Each of the plurality of phase-changeable material regions has different electrical resistance characteristics when programmed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.