Thin film transistor having silicon nanowire and method of fabricating the same
US7704806B2 · kind B2 · utility
47Cited by
4References
13Claims
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Key dates
| Filing date | Apr 5, 2006 |
| Grant date | Apr 27, 2010 |
| Priority date | — |
| Expiry date | Jul 23, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/762
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A thin film transistor includes: a silicon nanowire on a substrate, the silicon nanowire having a central portion and both side portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode spaced apart from the source electrode on the both side portions, the source electrode and the drain electrode electrically connected to the silicon nanowire, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.