Method of manufacturing a superjunction device with conventional terminations
US7704864B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 21, 2006 |
| Grant date | Apr 27, 2010 |
| Priority date | — |
| Expiry date | Aug 27, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes providing a semiconductor substrate having a heavily doped region of a first conductivity and has a lightly doped region of the first conductivity. The semiconductor substrate a plurality of trenches etched into an active region of the substrate forming a plurality of mesas. A preselected area in the active region is oxidized and then etched using a dry process oxide etch to remove the oxide in the bottoms of the trenches. A protective shield is formed over a region at a border between the active region and the termination region. The protective shield is partially removed from over the preselected area. Dopants are implanted at an angle into mesas in the preselected area. The plurality of trenches are with an insulating material, the top surface of the structure is planarized and a superjunction device is formed on the structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.