Methods for the formation of fully silicided metal gates
US7705405B2 · kind B2 · utility
2Cited by
6References
7Claims
0Family size
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Key dates
| Filing date | Jul 6, 2004 |
| Grant date | Apr 27, 2010 |
| Priority date | — |
| Expiry date | Mar 20, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
Abstract
An advanced gate structure that includes a fully silicided metal gate and silicided source and drain regions in which the fully silicided metal gate has a thickness that is greater than the thickness of the silicided source/drain regions is provided. Methods of forming the advanced gate structure are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.