Glenn A. Biery
14Patents
6h-index
38Co-inventors
62Inventor score
Filing activity: Nov 2, 1992 → Aug 14, 2009
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5470788A | Method of making self-aligned, lateral diffusion barrier in metal lines to eliminate electromigration | Emerging Cross-Sectional Technologies | 51 | Expired |
| US6597067B1 | Self-aligned, lateral diffusion barrier in metal lines to eliminate electromigration | Emerging Cross-Sectional Technologies | 30 | Expired |
| US6917108B2 | Reliable low-k interconnect structure with hybrid dielectric | Electricity | 25 | Expired |
| US5952674A | Topography monitor | Electricity | 13 | Expired |
| US7135398B2 | Reliable low-k interconnect structure with hybrid dielectric | Electricity | 9 | Expired |
| US8383483B2 | High performance CMOS circuits, and methods for fabricating same | Electricity | 7 | Active |
| US7273777B2 | Formation of fully silicided (FUSI) gate using a dual silicide process | Electricity | 5 | Expired |
| US5563517A | Dual channel d.c. low noise measurement system and test methodology | Physics | 5 | Expired |
| US7473975B2 | Fully silicided metal gate semiconductor device structure | Electricity | 3 | Active |
| US5434385A | Dual channel D.C. low noise measurement system and test methodology | Physics | 3 | Expired |
| US6933191B2 | Two-mask process for metal-insulator-metal capacitors and single mask process for thin film resistors | Electricity | 3 | Expired |
| US7705405B2 | Methods for the formation of fully silicided metal gates | Electricity | 2 | Expired |
| US8178433B2 | Methods for the formation of fully silicided metal gates | Electricity | 1 | Active |
| US7034400B2 | Dual damascene interconnect structure using low stress fluorosilicate insulator with copper conductors | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.