Patent · US Active

Method of program-verifying a nonvolatile memory device using subdivided verifications with increasing verify voltages

US7706190B2 · kind B2 · utility

6Cited by

2References

14Claims

0Family size

Assignee

SK hynix Inc. · KR

Inventors

Chang Won Yang · Goyang-si, KR
Jong Hyun Wang · Rancho Palos Verdes, US
Se Chun Park · Seoul, KR

Key dates

Filing date	Jun 27, 2008
Grant date	Apr 27, 2010
Priority date	—
Expiry date	Sep 8, 2028

Classification

Technology area (CPC G)Physics
CPC primaryG11C2211/5621
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

In a method of operating a non-volatile memory device subdivided verifications are performed by increasing verify voltages. Accordingly, threshold voltage distributions of memory cells can be narrowed and, therefore, the program performance of a flash memory device can be improved.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.