Systems, masks, and methods for photolithography
US7707541B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2006 |
| Grant date | Apr 27, 2010 |
| Priority date | — |
| Expiry date | Sep 26, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for determining a mask pattern to be used on a photo-mask in a photolithographic process is described. During the method, a target pattern is partitioning into subsets, which are distributed to processors. Then, a set of second mask patterns, each of which corresponds to one of the subsets, is determined. Moreover, at least one of the second set of mask patterns may be determined by: providing a first mask pattern that includes distinct types of regions corresponding to distinct types of regions of the photo-mask, calculating a gradient of a function, and determining a second mask pattern based, at least in part, on the gradient. Note that the function may depend on the first mask pattern and an estimate of a wafer pattern that results from the photolithographic process, and that the gradient may be calculated in accordance with a formula obtained by taking a derivative of the function.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.