Method for preparing substrate for growing gallium nitride and method for preparing gallium nitride substrate
US7708832B2 · kind B2 · utility
4Cited by
7References
6Claims
0Family size
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Key dates
| Filing date | Jul 22, 2008 |
| Grant date | May 4, 2010 |
| Priority date | — |
| Expiry date | Jul 22, 2028 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/18
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is a method for preparing a substrate for growing gallium nitride and a gallium nitride substrate. The method includes performing thermal cleaning on a surface of a silicon substrate, forming a silicon nitride (Si3N4) micro-mask on the surface of the silicon substrate in an in situ manner, and growing a gallium nitride layer through epitaxial lateral overgrowth (ELO) using an opening in the micro-mask. According to the method, by improving the typical ELO, it is possible to simplify the method for preparing the substrate for growing gallium nitride and the gallium nitride substrate and reduce process cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.