Method for deposition of magnesium doped (Al, In, Ga, B)N layers
US7709284B2 · kind B2 · utility
156Cited by
5References
20Claims
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Key dates
| Filing date | Aug 16, 2007 |
| Grant date | May 4, 2010 |
| Priority date | — |
| Expiry date | Aug 16, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for growing an improved quality device by depositing a low temperature (LT) magnesium (Mg) doped nitride semiconductor thin film. The low temperature Mg doped nitride semiconductor thin film may have a thickness greater than 50 nm. A multi quantum well (MQW) active layer may be grown at a growth temperature and the LT Mg doped nitride semiconductor thin film may deposited on the MQW active layer at a substrate temperature no greater than 150° C. above the growth temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.