Method for producing partial SOI structures comprising zones connecting a superficial layer and a substrate
US7709305B2 · kind B2 · utility
2Cited by
20References
38Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 12, 2007 |
| Grant date | May 4, 2010 |
| Priority date | — |
| Expiry date | Sep 11, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12674
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method for producing a semiconductor structure comprising a superficial layer, at least one embedded layer, and a support, which method comprises:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.