BiCMOS devices with a self-aligned emitter and methods of fabricating such BiCMOS devices
US7709338B2 · kind B2 · utility
13Cited by
16References
8Claims
0Family size
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Key dates
| Filing date | Dec 21, 2006 |
| Grant date | May 4, 2010 |
| Priority date | — |
| Expiry date | Dec 18, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/821
Abstract
A method of fabricating an heterojunction bipolar transistor (HBT) structure in a bipolar complementary metal-oxide-semiconductor (BiCMOS) process selectively thickens an oxide layer overlying a base region in areas that are not covered by a temporary emitter and spacers such that the temporary emitter can be removed and the base-emitter junction can be exposed without also completely removing the oxide overlying the areas of the base region that are not covered by the temporary emitter or spacers. As a result, a photomask is not required to remove the temporary emitter and to expose the base-emitter junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.