Method of making thermally programmable anti-reverse engineering interconnects wherein interconnects only conduct when heated above room temperature
US7709401B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2008 |
| Grant date | May 4, 2010 |
| Priority date | — |
| Expiry date | May 17, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/917
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An interconnect and method of making the interconnect. The method includes forming a dielectric layer on a substrate, the dielectric layer having a top surface and a bottom surface; forming a first wire and a second wire in the dielectric layer, the first wire separated from the second wire by a region of the dielectric layer; and forming metallic nanoparticles in or on the top surface of the dielectric layer between the first and second wires, the metallic nanoparticles capable of electrically connecting the first wire and the second wire only while the nanoparticles are heated to a temperature greater than room temperature and a voltage is applied between the first and second wires.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.