RF circuits including transistors having strained material layers
US7709828B2 · kind B2 · utility
132Cited by
158References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 10, 2005 |
| Grant date | May 4, 2010 |
| Priority date | — |
| Expiry date | Oct 11, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Circuits for processing radio frequency (“RF”) and microwave signals are fabricated using field effect transistors (“FETs”) that have one or more strained channel layers disposed on one or more planarized substrate layers. FETs having such a configuration exhibit improved values for, for example, transconductance and noise figure. RF circuits such as, for example, voltage controlled oscillators (“VCOs”), low noise amplifiers (“LNAs”), and phase locked loops (“PLLs”) built using these FETs also exhibit enhanced performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.