Storage device with charge trapping structure and methods
US7709882B2 · kind B2 · utility
2Cited by
5References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 20, 2005 |
| Grant date | May 4, 2010 |
| Priority date | — |
| Expiry date | Jun 12, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B11/08
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A storage device includes a first semiconducting layer having a p-dopant and a second semiconducting layer having an n-dopant, disposed on the first semiconducting layer forming a junction between the first and the second semiconducting layers. The storage device also includes a charge trapping structure disposed on the second semiconducting layer and a conductive gate, wherein the conductive gate and the charge trapping structure move relative to the other, wherein an electric field applied across the second semiconducting layer and the conductive gate traps charge in the charge trapping structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.