Patent · US Active

Semiconductor component and method

US7709887B2 · kind B2 · utility

5Cited by

5References

21Claims

0Family size

Assignee

Infineon Technologies Austria AG · AT

Inventors

Frank Hille · Munich, DE
Frank Umbach · Munich, DE
Anton Mauder · Kolbermoor, DE
Hans-Joachim Schulze · Taufkirchen, DE
Thomas Laska · Birkenfeld, DE
Manfred Pfaffenlehner · Birkenfeld, DE

Key dates

Filing date	Nov 28, 2006
Grant date	May 4, 2010
Priority date	—
Expiry date	Apr 13, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/117
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor component and method of making a semiconductor component is disclosed. In one embodiment, the semiconductor component includes a drift region of a first conductivity type, a body region of a second conductivity type, and a trench extending into the body region. A semiconductor region of the first conductivity type is in contact with the drift region and the body region and is arranged at a distance from the trench.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.