Magneto-resistance effect element capable of obtaining a reproducing signal with a high quality
US7710690B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2005 |
| Grant date | May 4, 2010 |
| Priority date | — |
| Expiry date | Sep 30, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/39
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magneto-resistance effect element can obtain a high output and makes it possible to stabilize magnetization in a magnetization free layer therein even if a sense current is caused to flow. The magneto-resistance effect element is provided with a magnetization free layer whose magnetization direction is variable, a magnetization pinned layer whose magnetization direction is pinned, and an intermediate layer provided between the magnetization free layer and the magnetization pinned layer, where when no external magnetic field is present and no current flows, the magnetization direction in the magnetization free layer is anti-parallel to the magnetization direction pinned in the magnetization pinned layer, an easy axis of magnetization in the magnetization free layer is parallel to the magnetization direction pinned in the magnetization pinned layer, and a sense current flows from the magnetization free layer to the magnetization pinned layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.