Optical integrated device and manufacturing method thereof
US7711229B2 · kind B2 · utility
0Cited by
5References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2007 |
| Grant date | May 4, 2010 |
| Priority date | — |
| Expiry date | Aug 23, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/12142
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In the optical integrated devices with ridge waveguide structure based on the conventional technology, there occur such troubles as generation of a recess in a BJ section to easily cause a crystal defect due to the mass transport phenomenon of InP when a butt joint (BJ) is grown, lowering of reliability of the devices, and lowering in a yield in fabrication of devices. In the present invention, a protection layer made of InGaAsP is provided on the BJ section. The layer has high etching selectivity for the InP cladding layer and remains on the BJ section even after mesa etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.