β-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method
US7713353B2 · kind B2 · utility
7Cited by
12References
24Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 12, 2008 |
| Grant date | May 11, 2010 |
| Priority date | — |
| Expiry date | Jun 12, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for growing a β-Ga2O3 single includes preparing a β-Ga2O3 seed crystal and growing the β-Ga2O3 single crystal from the β-Ga2O3 seed crystal in a predetermined direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.