Noboru Ichinose
28Patents
10h-index
33Co-inventors
75Inventor score
Filing activity: Aug 14, 1974 → Jun 27, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6977397B2 | Light emitting element and method of making same | Electricity | 34 | Expired |
| US5693886A | Pressure sensor | Physics | 32 | Expired |
| US7393411B2 | β-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method | Electricity | 29 | Expired |
| US7727865B2 | Method for controlling conductivity of Ga2O3single crystal | Emerging Cross-Sectional Technologies | 27 | Expired |
| US4259292A | Gas detecting element | Physics | 22 | Expired |
| US6090732A | Zinc-doped tricalcium phosphate ceramic material | Human Necessities | 18 | Expired |
| US4855118A | Method of producing fluorapatite | Physics | 13 | Expired |
| US7608472B2 | Light emitting element and method of making same | Electricity | 12 | Active |
| US4971739A | Method of producing fluorapatite and a moisture sensitive resistor using fluorapatite obtained by the same | Physics | 10 | Expired |
| US4045764A | Gas-sensing material | Electricity | 10 | Expired |
| US7319249B2 | Light emitting element and method of making same | Electricity | 10 | Expired |
| US4338223A | Method of manufacturing a voltage-nonlinear resistor | Emerging Cross-Sectional Technologies | 8 | Expired |
| US7713353B2 | β-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method | Electricity | 7 | Active |
| US7629615B2 | Light emitting element and method of making same | Electricity | 6 | Active |
| US4170770A | Gas leak-detecting apparatus | Physics | 6 | Expired |
| US4131479A | Transparent ceramics | Emerging Cross-Sectional Technologies | 5 | Expired |
| US8262796B2 | β-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method | Electricity | 5 | Active |
| US7060982B2 | Fluoride single crystal for detecting radiation, scintillator and radiation detector using the single crystal, and method for detecting radiation | Physics | 3 | Expired |
| US7977673B2 | Semiconductor layer with a Ga2O3 system | Electricity | 3 | Expired |
| US3991340A | Discharge lamp lighting apparatus including a sintered type oxide negative resistance starting element | Emerging Cross-Sectional Technologies | 3 | Expired |
| US8747553B2 | β-Ga2O3 single crystal growing method including crystal growth method | Electricity | 2 | Active |
| US8791466B2 | Light emitting element and method of making same | Electricity | 0 | Active |
| US6777609B2 | Thermoelectric conversion material and thermoelectric conversion device | Chemistry; Metallurgy | 0 | Expired |
| US8674399B2 | Semiconductor layer | Electricity | 0 | Active |
| US9117974B2 | Light emitting element and method of making same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.