Method and apparatus to improve plasma etch uniformity
US7713432B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Sep 16, 2005 |
| Grant date | May 11, 2010 |
| Priority date | — |
| Expiry date | Sep 16, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3299
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method and an apparatus for improving the etch uniformity across a substrate during a plasma etch process that employs the use of an inductively coupled plasma helical inductor. The plasma apparatus comprising a vacuum chamber, a support member in the vacuum chamber for holding the substrate, an etchant gas supply for providing an etchant gas to the vacuum chamber, an exhaust in fluid communication with the vacuum chamber, an RF power source and a helical inductor disposed around or near a portion of the vacuum chamber. A sensor is provided for measuring a process attribute to generate a signal to a controller that then controls a mechanism that varies the position of the helical inductor so that the uniformity of the plasma etch is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.