Method for fabricating light emitting diode structure having irregular serrations
US7713769B2 · kind B2 · utility
5Cited by
1References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2007 |
| Grant date | May 11, 2010 |
| Priority date | — |
| Expiry date | Feb 15, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/82
Abstract
The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer on carved regions; the carved region is selectively etched to form a plurality of concave zones and form a plurality of convex zones; a semiconductor layer structure is epitaxially grown on the element regions and carved regions of the substrate; the semiconductor layer structure on the element regions is fabricated into a LED element with a photolithographic process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.