Method for forming a structure provided with at least one zone of one or several semiconductor nanocrystals localised with precision
US7713850B2 · kind B2 · utility
1Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2005 |
| Grant date | May 11, 2010 |
| Priority date | — |
| Expiry date | Sep 26, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/962
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Method for forming a structure provided with at least one zone of one or several semiconductor nanocrystals (13). It consists in:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.