Manufacture method for semiconductor device suitable for forming wirings by damascene method and semiconductor device
US7713869B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2005 |
| Grant date | May 11, 2010 |
| Priority date | — |
| Expiry date | Nov 30, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An interlayer insulating film having a concave portion is formed on a semiconductor substrate. A tight adhesion film is formed on the inner surface of the concave portion and the upper surface of the insulating film. The surface of the adhesion layer is covered with an auxiliary film made of Cu alloy containing a first metal element. A conductive member containing a second metal element other than the first metal element is embedded in the concave portion, and deposited on the auxiliary film. Heat treatment is performed to make atoms of the first metal element in the auxiliary film segregate on the inner surface of the concave portion. The adhesion layer contains an element for enhancing tight adhesion of the auxiliary film more than if the auxiliary film is deposited directly on a surface of the interlayer insulating film. During the period until the barrier layer having also the function of enhancing tight adhesion, it becomes possible to retain sufficient tight adhesion of a wiring member and prevent peel-off of the wiring member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.