Periodic plasma annealing in an ALD-type process
US7713874B2 · kind B2 · utility
521Cited by
92References
37Claims
0Family size
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Key dates
| Filing date | May 2, 2007 |
| Grant date | May 11, 2010 |
| Priority date | — |
| Expiry date | May 2, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76843
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods for performing periodic plasma annealing during atomic layer deposition are provided along with structures produced by such methods. The methods include contacting a substrate with a vapor-phase pulse of a metal source chemical and one or more plasma-excited reducing species for a period of time. Periodically, the substrate is contacted with a vapor phase pulse of one or more plasma-excited reducing species for a longer period of time. The steps are repeated until a metal thin film of a desired thickness is formed over the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.