Film forming apparatus, film forming method, program and storage medium
US7713886B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2007 |
| Grant date | May 11, 2010 |
| Priority date | — |
| Expiry date | Jun 10, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a film forming method using a film forming gas composed of a metal alkoxide wherein clean film formation suppressed in contamination of a target substrate to be processed is achieved by restraining aluminum or an aluminum alloy in the processing chamber from dissolving. Specifically disclosed is method for forming a thin film on a target substrate to be processed which is held in a processing chamber, and this method comprises a step for heating the target substrate and a step for supplying a film forming gas into the processing chamber. This method is characterized in that the film forming gas is composed of a metal alkoxide, the processing chamber is made of aluminum or an aluminum alloy, and a protective film composed of a nonporous anodic oxide film is formed on the inner wall surface of the processing chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.