Geiger mode avalanche photodiode

US7714292B2 · kind B2 · utility

Assignee

• KONINKLIJKE PHILIPS ELECTRONICS NV · NL

Inventors

• Prabhat Agarwal · Leuven, BE
• Jan Sonsky · Leuven, BE
• Lasse Kauppinen · Espoo, FI

Key dates

• Filing date: Jan 17, 2007
• Grant date: May 11, 2010
• Expiry date: Jan 31, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/199

Abstract

A avalanche mode photodiode array (102) is fabricated using a silicon on insulator wafer and substrate transfer process. The array includes a plurality of photodiodes (100). The photodiodes (100) include an electrically insulative layer (206), a depletion region (204), and first (208) and second (210) doped regions. An interconnection layer (212) includes electrodes (214, 216) which provides electrical connections to the photodiodes. The photodiode array (102) is carried by a handle wafer (217).