Non-volatile memory device
US7715233B2 · kind B2 · utility
1Cited by
1References
14Claims
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Assignee
Inventors
Key dates
| Filing date | Mar 7, 2008 |
| Grant date | May 11, 2010 |
| Priority date | — |
| Expiry date | Jun 15, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/08
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory device is provided. In an aspect, the non-volatile memory device includes two or more common source lines that are included in one memory cell block in order to distribute the current that could have been concentrated on one common source line. As a result, the bouncing phenomenon generated by the nose of the source line can be reduced. That is, at the time of a verifying operation performed during a program operation, the current concentrated on a common source line can be distributed and, therefore, the occurrence of under-programmed cells can be prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.