Method for manufacturing sputter-coated substrates, magnetron source and sputtering chamber with such source
US7718042B2 · kind B2 · utility
2Cited by
18References
15Claims
0Family size
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Key dates
| Filing date | Mar 12, 2004 |
| Grant date | May 18, 2010 |
| Priority date | — |
| Expiry date | Sep 14, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3408
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetron source, a magnetron treatment chamber, and a method of manufacturing substrates with a vacuum plasma treated surface, generate and exploit on asymmetrically unbalanced long-range magnetron magnetic field pattern which is swept along the substrate surface for improving the ion density at a substrate surface being vacuum plasma treated. The long-range field reaches the substrate surface with a component of the magnetic field parallel to the substrate surface of at least 0.1, and preferably between 1 and 20, Gauss. The plasma treating can be sputter-coating, or etching, for example.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.