Thin buried oxides by low-dose oxygen implantation into modified silicon
US7718231B2 · kind B2 · utility
3Cited by
9References
9Claims
0Family size
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Key dates
| Filing date | Sep 30, 2003 |
| Grant date | May 18, 2010 |
| Priority date | — |
| Expiry date | Dec 15, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3063
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating silicon-on-insulators (SOIs) having a thin, but uniform buried oxide region beneath a Si-containing over-layer is provided. The SOI structures are fabricated by first modifying a surface of a Si-containing substrate to contain a large concentration of vacancies or voids. Next, a Si-containing layer is typically, but not always, formed atop the substrate and then oxygen ions are implanted into the structure utilizing a low-oxygen dose. The structure is then annealed to convert the implanted oxygen ions into a thin, but uniform thermal buried oxide region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.