Manufacture method for ZnO-containing compound semiconductor layer
US7718468B2 · kind B2 · utility
0Cited by
1References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2008 |
| Grant date | May 18, 2010 |
| Priority date | — |
| Expiry date | Aug 20, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02661
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes (a) preparing a substrate, and (b) growing a ZnO-containing compound semiconductor layer above the substrate by supplying at the same time at least Zn and O as source gases and S as a surfactant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.