Low-k damage avoidance during bevel etch processing
US7718542B2 · kind B2 · utility
6Cited by
5References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2006 |
| Grant date | May 18, 2010 |
| Priority date | — |
| Expiry date | Aug 25, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6833
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching a bevel edge of a substrate is provided. A patterned photoresist mask is formed over the etch layer. The bevel edge is cleaned comprising providing a cleaning gas comprising at least one of a CO2, CO, CxHy, H2, NH3, CxHyFz and a combination thereof, forming a cleaning plasma from the cleaning gas, and exposing the bevel edge to the cleaning plasma. Features are etched into the etch layer through the photoresist features and the photoresist mask is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.