Two step etching of a bottom anti-reflective coating layer in dual damascene application
US7718543B2 · kind B2 · utility
3Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2006 |
| Grant date | May 18, 2010 |
| Priority date | — |
| Expiry date | Dec 8, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76808
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for removing a BARC layer from a feature are provided in the present invention. In one embodiment, the method includes providing a substrate having a feature filled with a BARC layer in an etching chamber, supplying a first gas mixture comprising NH3 gas into the chamber to etch a first portion of the BARC layer filling in the feature, and supplying a second gas mixture comprising O2 gas into the etching chamber to etch the remaining portion of the BARC layer disposed in the feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.