Method for forming photoresist layer
US7718551B2 · kind B2 · utility
5Cited by
4References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2008 |
| Grant date | May 18, 2010 |
| Priority date | — |
| Expiry date | Mar 8, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/15
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a photoresist layer is provided. The method includes following steps. A wafer is provided in a semiconductor machine. The wafer is spun at a first spin speed. A pre-wet solvent is dispensed on the spinning wafer by using a nozzle disposed at a fixed position. The pre-wet solvent then stops dispensing. The spin speed of the wafer is adjusted from the first spin speed to a second spin speed which is faster than the first spin speed. Thereafter, a photoresist layer is coated on the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.