Sputtered contamination shielding for an ion source
US7718983B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2004 |
| Grant date | May 18, 2010 |
| Priority date | — |
| Expiry date | Mar 18, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/08
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Shielding associated with an ion source, such as an anode layer source, reduces the amount and/or concentration of sputtered contaminants impinging and remaining on the surface of a target substrate. While passing the ion beam through to the target substrate, shielding can reduce the total amount of sputtered contaminants impinging the substrate before, during, and/or after passage of the substrate through the envelope of the etching beam. Particularly, a shield configuration that blocks the contaminants from impinging the substrate after the substrate passes through the etching beam (i.e., outside of the envelope of the etching beam) yields a higher quality substrate with reduced substrate contamination.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.