(Al,Ga,In)N and ZnO direct wafer bonded structure for optoelectronic applications, and its fabrication method

US7719020B2 · kind B2 · utility

Assignees

• The Regents of the University of California · US
• Japan Science and Technology Agency · JP

Inventors

• Akihiko Murai · Goleta, US
• Christina Ye Chen · Santa Clara, US
• Daniel Bryce Thompson · Walnut Creek, US
• Lee McCarthy · Lompoc, US
• Steven P. DenBaars · Goleta, US
• Shuji Nakamura · Goleta, US
• Umesh Mishra · Montecito, US

Key dates

• Filing date: Jun 16, 2006
• Grant date: May 18, 2010
• Expiry date: Dec 20, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/825
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED), wherein light passes through electrically conductive ZnO. Flat and clean surfaces are prepared for both the (Al, Ga, In)N and ZnO wafers. A wafer bonding process is then performed between the (Al, Ga, In)N and ZnO wafers, wherein the (Al, Ga, In)N and ZnO wafers are joined together and then wafer bonded in a nitrogen ambient under uniaxial pressure at a set temperature for a set duration. After the wafer bonding process, ZnO is shaped for increasing light extraction from inside of LED.