Semiconductor devices having thin film transistors and methods of fabricating the same
US7719033B2 · kind B2 · utility
14Cited by
51References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2006 |
| Grant date | May 18, 2010 |
| Priority date | — |
| Expiry date | Jun 3, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices having thin film transistors (TFTs) and methods of fabricating the same are provided. The semiconductor devices include a semiconductor substrate and a lower interlayer insulating layer disposed on the semiconductor substrate. A lower semiconductor body disposed on or in the lower interlayer insulating layer. A lower TFT includes a lower source region and a lower drain region, which are disposed in the lower semiconductor body, and a lower gate electrode, which covers and crosses at least portions of at least two surfaces of the lower semiconductor body disposed between the lower source and drain regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.