Heating element for enhanced E2PROM
US7719048B1 · kind B1 · utility
7Cited by
6References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2007 |
| Grant date | May 18, 2010 |
| Priority date | — |
| Expiry date | Apr 26, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/60
Abstract
A heating element is utilized to improve the bias conditions of an E2PROM cell during program and erase operations. The heating element can also be used to anneal or condition the cell for improved charge storage. During a program or an erase operation, the cell's control gate and read transistor are set to ground. The heating element then has a voltage potential applied across its terminals, causing current to flow in this resistor. As the current density increases, the resistor begins to generate heat. This heat is thermally coupled into the cell's floating gate, causing its temperature to rise.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.