Method for pre-treating epitaxial layer, method for evaluating epitaxial layer, and apparatus for evaluating epitaxial layer
US7719260B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2008 |
| Grant date | May 18, 2010 |
| Priority date | — |
| Expiry date | Dec 2, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An apparatus for evaluating an epitaxial layer, including pre-treating the epitaxial layer before evaluation of the epitaxial layer by making the epitaxial layer contact with a metal electrode by a capacitance-voltage measurement, the method comprising; applying carbon-bearing compound to a surface of the epitaxial layer; subsequently irradiating ultraviolet light to the surface of the epitaxial layer; and thereby forming an oxide film on the surface of the epitaxial layer.An apparatus for evaluating an epitaxial layer of an epitaxial wafer, the apparatus including a pretreatment unit for pre-treating an epitaxial wafer having a semiconductor wafer and an epitaxial layer formed on the semiconductor wafer, a metal-electrode which can be made contact with or vapor-deposited on the surface of the epitaxial layer of the epitaxial wafer which has been pre-treated in the pretreatment unit, a measuring electrode which can be made contact with or vapor-deposited on the semiconductor wafer, and a measuring unit which is connected to each of the electrodes and is used to measure physical properties of the epitaxial layer. The pretreatment unit includes an applying device for applying a carbo…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.