Capacitor having tapered cylindrical storage node and method for manufacturing the same
US7723183B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 8, 2009 |
| Grant date | May 25, 2010 |
| Priority date | — |
| Expiry date | Jul 8, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
A capacitor is made by forming a buffer oxide layer, an etching stop layer, and a mold insulation layer over a semiconductor substrate having a storage node contact plug. The mold insulation layer and the etching stop layer are etched to form a hole in an upper portion of the storage node contact plug. A tapering layer is deposited over the mold insulation layer including the hole. The tapering layer and the buffer oxide layer are etched back so that the tapering layer is remained only at the upper end portion of the etched hole. A metal storage node layer formed on the etched hole over the remaining tapering layer. The mold insulation layer and the remaining tapering layer are removed to form a cylindrical storage node having a tapered upper end. A dielectric layer and a plate node are formed over the storage node.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.