Method of manufacturing semiconductor device having buried gate
US7723191B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2007 |
| Grant date | May 25, 2010 |
| Priority date | — |
| Expiry date | Dec 13, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0151
Abstract
A method of manufacturing a semiconductor device having buried gates may include forming a stacked structure of sequentially stacked first mask patterns and second mask patterns with equal widths to expose active regions and isolation regions of a semiconductor substrate. After forming reduced first mask patterns by decreasing the width only of the first mask patterns, trenches may be formed in the active regions and the isolation regions by etching the exposed portions of the semiconductor substrate using the second mask patterns as an etch mask. Then, gate insulating films may be formed on inner walls of the trenches in the active regions, and a conductive material may be buried into the trenches in the active regions and the isolation regions to form gates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.